<?xml version="1.0" encoding="UTF-8"?>
<feed xmlns="http://www.w3.org/2005/Atom" xmlns:dc="http://purl.org/dc/elements/1.1/">
  <title>DSpace Collection:</title>
  <link rel="alternate" href="http://localhost:8080/jspui/handle/123456789/228" />
  <subtitle />
  <id>http://localhost:8080/jspui/handle/123456789/228</id>
  <updated>2026-05-02T06:53:07Z</updated>
  <dc:date>2026-05-02T06:53:07Z</dc:date>
  <entry>
    <title>Semiconductor Physics Session 5  (p-n junction diode) VL</title>
    <link rel="alternate" href="http://localhost:8080/jspui/handle/123456789/229" />
    <author>
      <name>Badhe, Sanjiv</name>
    </author>
    <id>http://localhost:8080/jspui/handle/123456789/229</id>
    <updated>2020-09-22T06:14:21Z</updated>
    <published>2020-09-22T00:00:00Z</published>
    <summary type="text">Title: Semiconductor Physics Session 5  (p-n junction diode) VL
Authors: Badhe, Sanjiv
Abstract: This is a 5th session on Semiconductor Physics. In this session, formation of depletion layer at the p-n junction is discussed. I-V Characteristics of p-n junction diode are explained on the basis of energy band diagram. At the end, concept of avalanche breakdown is introduced.</summary>
    <dc:date>2020-09-22T00:00:00Z</dc:date>
  </entry>
</feed>

