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  1. Somaiya Vidyavihar Digital Repository
  2. K.J.Somaiya Institute of Technology, Sion
  3. Audio Visuals - Institute Faculty
  4. Prof. Sanjiv Badhe
  5. Module 3 : Semiconductor Physics
  6. Semiconductor Physics Session 2 (Fermi Level and Fermi Dirac distribution Function) VL
Please use this identifier to cite or link to this item: http://localhost:8080/jspui/handle/123456789/223
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dc.contributor.authorBadhe, Sanjiv-
dc.date.accessioned2020-09-22T05:55:20Z-
dc.date.available2020-09-22T05:55:20Z-
dc.date.issued2020-09-22-
dc.identifier.urihttps://youtu.be/6ShYjai83bA-
dc.identifier.urihttp://localhost:8080/jspui/handle/123456789/223-
dc.description.abstractThis is a 2nd session on Semiconductor Physics. In this session, the concept of Fermi energy level is introduced. First the Fermi level in conductors and then Fermi level in semiconductors is discussed. The significance of Fermi-Dirac distribution function is studied. In case of semiconductors, the effect of increasing temperature on the Fermi level is studied. Effect of doping concentration on the Fermi level is also explained. At the end it is proved that Fermi level in intrinsic semiconductor lies at the middle of the forbidden gap.en_US
dc.language.isoenen_US
dc.subjectFermi energy levelen_US
dc.titleSemiconductor Physics Session 2 (Fermi Level and Fermi Dirac distribution Function) VLen_US
dc.typeVideoen_US
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