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  1. Somaiya Vidyavihar Digital Repository
  2. K.J.Somaiya Institute of Technology, Sion
  3. Audio Visuals - Institute Faculty
  4. Prof. Sanjiv Badhe
  5. Module 3 : Semiconductor Physics
  6. Semiconductor Physics Session 5 (p-n junction diode) VL
Please use this identifier to cite or link to this item: http://localhost:8080/jspui/handle/123456789/229
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dc.contributor.authorBadhe, Sanjiv-
dc.date.accessioned2020-09-22T06:14:19Z-
dc.date.available2020-09-22T06:14:19Z-
dc.date.issued2020-09-22-
dc.identifier.urihttps://youtu.be/Z-mdnY2ObRg-
dc.identifier.urihttp://localhost:8080/jspui/handle/123456789/229-
dc.description.abstractThis is a 5th session on Semiconductor Physics. In this session, formation of depletion layer at the p-n junction is discussed. I-V Characteristics of p-n junction diode are explained on the basis of energy band diagram. At the end, concept of avalanche breakdown is introduced.en_US
dc.language.isoenen_US
dc.subjectSemiconductor Physicsen_US
dc.subjectp-n junctionen_US
dc.subjectavalanche breakdownen_US
dc.titleSemiconductor Physics Session 5 (p-n junction diode) VLen_US
dc.typeVideoen_US
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